Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the...

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Detalles Bibliográficos
Autores principales: Sun, Tao, Luo, Xiaorong, Wei, Jie, Yang, Chao, Zhang, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7364695/
https://www.ncbi.nlm.nih.gov/pubmed/32676687
http://dx.doi.org/10.1186/s11671-020-03376-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7364695/
https://www.ncbi.nlm.nih.gov/pubmed/32676687
http://dx.doi.org/10.1186/s11671-020-03376-z

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