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Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC
The effect of generation rate on transient photoconductivity of semi-insulating (SI) 4H-SiC is discussed. The rate of generation of electron–hole pairs is dependent on the number of photons incident on the sample material and its absorption and reflection coefficients. The number of photons and thei...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7367823/ https://www.ncbi.nlm.nih.gov/pubmed/32681078 http://dx.doi.org/10.1038/s41598-020-68898-z |