Nano-scale depth-varying recrystallization of oblique Ar(+) sputtered Si(111) layers

Silicon, the workhorse of semiconductor industry, is being exploited for various functional applications in numerous fields of nanotechnology. In this paper, we report the fabrication of depth controllable amorphous silicon (a-Si) layers under 80 keV Ar(+) ion sputtering at off-normal ion incidences...

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Detalles Bibliográficos
Autores principales: Gupta, Divya, Umapathy, G. R., Singhal, Rahul, Ojha, Sunil, Aggarwal, Sanjeev
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7367853/
https://www.ncbi.nlm.nih.gov/pubmed/32681020
http://dx.doi.org/10.1038/s41598-020-68873-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7367853/
https://www.ncbi.nlm.nih.gov/pubmed/32681020
http://dx.doi.org/10.1038/s41598-020-68873-8

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