A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf(0.5)Zr(0.5)O(2) Thin Films

The discovery of ferroelectricity in HfO(2)-based materials in 2011 provided new research directions and opportunities. In particular, for atomic layer deposited Hf(0.5)Zr(0.5)O(2) (HZO) films, it is possible to obtain homogenous thin films with satisfactory ferroelectric properties at a low thermal...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Si Joon, Mohan, Jaidah, Kim, Harrison Sejoon, Hwang, Su Min, Kim, Namhun, Jung, Yong Chan, Sahota, Akshay, Kim, Kihyun, Yu, Hyun-Yong, Cha, Pil-Ryung, Young, Chadwin D., Choi, Rino, Ahn, Jinho, Kim, Jiyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7372450/
https://www.ncbi.nlm.nih.gov/pubmed/32630791
http://dx.doi.org/10.3390/ma13132968

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7372450/
https://www.ncbi.nlm.nih.gov/pubmed/32630791
http://dx.doi.org/10.3390/ma13132968

Ejemplares similares