SiN(x)/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy

Contactless electroreflectance studies coupled with numerical calculations are performed on in-situ SiN(x) capped N-polar III-nitride high electron mobility transistor (HEMT) structures with a scaled channel thickness in order to analyse the built-in electric field in the GaN channel layer. The expe...

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Detalles Bibliográficos
Autores principales: Janicki, Ł., Li, H., Keller, S., Mishra, U. K., Kudrawiec, R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7374109/
https://www.ncbi.nlm.nih.gov/pubmed/32694529
http://dx.doi.org/10.1038/s41598-020-68963-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7374109/
https://www.ncbi.nlm.nih.gov/pubmed/32694529
http://dx.doi.org/10.1038/s41598-020-68963-7

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