Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates

The large spin Hall effect in topological insulators (TIs) is very attractive for ultralow-power spintronic devices. However, evaluation of the spin Hall angle and spin–orbit torque (SOT) of TIs is usually performed on high-quality single-crystalline TI thin films grown on dedicated III-V semiconduc...

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Detalles Bibliográficos
Autores principales: Khang, Nguyen Huynh Duy, Nakano, Soichiro, Shirokura, Takanori, Miyamoto, Yasuyoshi, Hai, Pham Nam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7376042/
https://www.ncbi.nlm.nih.gov/pubmed/32699260
http://dx.doi.org/10.1038/s41598-020-69027-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7376042/
https://www.ncbi.nlm.nih.gov/pubmed/32699260
http://dx.doi.org/10.1038/s41598-020-69027-6

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