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Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates

The large spin Hall effect in topological insulators (TIs) is very attractive for ultralow-power spintronic devices. However, evaluation of the spin Hall angle and spin–orbit torque (SOT) of TIs is usually performed on high-quality single-crystalline TI thin films grown on dedicated III-V semiconduc...

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Autores principales: Khang, Nguyen Huynh Duy, Nakano, Soichiro, Shirokura, Takanori, Miyamoto, Yasuyoshi, Hai, Pham Nam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7376042/
https://www.ncbi.nlm.nih.gov/pubmed/32699260
http://dx.doi.org/10.1038/s41598-020-69027-6
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author Khang, Nguyen Huynh Duy
Nakano, Soichiro
Shirokura, Takanori
Miyamoto, Yasuyoshi
Hai, Pham Nam
author_facet Khang, Nguyen Huynh Duy
Nakano, Soichiro
Shirokura, Takanori
Miyamoto, Yasuyoshi
Hai, Pham Nam
author_sort Khang, Nguyen Huynh Duy
collection PubMed
description The large spin Hall effect in topological insulators (TIs) is very attractive for ultralow-power spintronic devices. However, evaluation of the spin Hall angle and spin–orbit torque (SOT) of TIs is usually performed on high-quality single-crystalline TI thin films grown on dedicated III-V semiconductor substrates. Here, we report on room-temperature ultralow power SOT magnetization switching of a ferrimagnetic layer by non-epitaxial BiSb TI thin films deposited on Si/SiO(2) substrates. We show that non-epitaxial BiSb thin films outperform heavy metals and other epitaxial TI thin films in terms of the effective spin Hall angle and switching current density by one to nearly two orders of magnitude. The critical SOT switching current density in BiSb is as low as 7 × 10(4) A/cm(2) at room temperature. The robustness of BiSb against crystal defects demonstrate its potential applications to SOT-based spintronic devices.
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spelling pubmed-73760422020-07-24 Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates Khang, Nguyen Huynh Duy Nakano, Soichiro Shirokura, Takanori Miyamoto, Yasuyoshi Hai, Pham Nam Sci Rep Article The large spin Hall effect in topological insulators (TIs) is very attractive for ultralow-power spintronic devices. However, evaluation of the spin Hall angle and spin–orbit torque (SOT) of TIs is usually performed on high-quality single-crystalline TI thin films grown on dedicated III-V semiconductor substrates. Here, we report on room-temperature ultralow power SOT magnetization switching of a ferrimagnetic layer by non-epitaxial BiSb TI thin films deposited on Si/SiO(2) substrates. We show that non-epitaxial BiSb thin films outperform heavy metals and other epitaxial TI thin films in terms of the effective spin Hall angle and switching current density by one to nearly two orders of magnitude. The critical SOT switching current density in BiSb is as low as 7 × 10(4) A/cm(2) at room temperature. The robustness of BiSb against crystal defects demonstrate its potential applications to SOT-based spintronic devices. Nature Publishing Group UK 2020-07-22 /pmc/articles/PMC7376042/ /pubmed/32699260 http://dx.doi.org/10.1038/s41598-020-69027-6 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Khang, Nguyen Huynh Duy
Nakano, Soichiro
Shirokura, Takanori
Miyamoto, Yasuyoshi
Hai, Pham Nam
Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates
title Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates
title_full Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates
title_fullStr Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates
title_full_unstemmed Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates
title_short Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates
title_sort ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on si substrates
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7376042/
https://www.ncbi.nlm.nih.gov/pubmed/32699260
http://dx.doi.org/10.1038/s41598-020-69027-6
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