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Ultralow power spin–orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates
The large spin Hall effect in topological insulators (TIs) is very attractive for ultralow-power spintronic devices. However, evaluation of the spin Hall angle and spin–orbit torque (SOT) of TIs is usually performed on high-quality single-crystalline TI thin films grown on dedicated III-V semiconduc...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7376042/ https://www.ncbi.nlm.nih.gov/pubmed/32699260 http://dx.doi.org/10.1038/s41598-020-69027-6 |