Enhanced Shift Currents in Monolayer 2D GeS and SnS by Strain-Induced Band Gap Engineering

[Image: see text] Group IV monochalcogenides exhibit spontaneous polarization and ferroelectricity, which are important in photovoltaic materials. Since strain engineering plays an important role in ferroelectricity, in the present work, the effect of equibiaxial strain on the band structure and shi...

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Detalles Bibliográficos
Autores principales: Kaner, Ngeywo Tolbert, Wei, Yadong, Jiang, Yingjie, Li, Weiqi, Xu, Xiaodong, Pang, Kaijuan, Li, Xingji, Yang, Jianqun, Jiang, YongYuan, Zhang, Guiling, Tian, Wei Quan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7376894/
https://www.ncbi.nlm.nih.gov/pubmed/32715206
http://dx.doi.org/10.1021/acsomega.0c01319

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7376894/
https://www.ncbi.nlm.nih.gov/pubmed/32715206
http://dx.doi.org/10.1021/acsomega.0c01319

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