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Enhanced Shift Currents in Monolayer 2D GeS and SnS by Strain-Induced Band Gap Engineering
[Image: see text] Group IV monochalcogenides exhibit spontaneous polarization and ferroelectricity, which are important in photovoltaic materials. Since strain engineering plays an important role in ferroelectricity, in the present work, the effect of equibiaxial strain on the band structure and shi...
| Autores principales: | , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7376894/ https://www.ncbi.nlm.nih.gov/pubmed/32715206 http://dx.doi.org/10.1021/acsomega.0c01319 |