Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate

[Image: see text] Beryllium oxide (BeO) belongs to a very unique material family that exhibits the divergent properties of high thermal conductivity and high electrical resistivity. BeO has the same crystal structure as GaN, and the absolute difference in the lattice constants is less than 17%. Here...

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Detalles Bibliográficos
Autores principales: Johar, Muhammad Ali, Waseem, Aadil, Hassan, Mostafa Afifi, Bagal, Indrajit V., Abdullah, Ameer, Ha, Jun-Seok, Lee, June Key, Ryu, Sang-Wan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7379061/
https://www.ncbi.nlm.nih.gov/pubmed/32715262
http://dx.doi.org/10.1021/acsomega.0c02411

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7379061/
https://www.ncbi.nlm.nih.gov/pubmed/32715262
http://dx.doi.org/10.1021/acsomega.0c02411

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