Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

Temperature (T = 40 ~ 300 K) dependence of Hall-effect analysis on the dual Si-δ-doped AlGaAs/InGaAs/AlGaAs quantum-well (QW) structures with various space layer thicknesses (t(S) = 5, 10 and 15 nm) was performed. An interesting hysteresis behavior of electron sheet concentration [n(2D)(T)] was obse...

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Detalles Bibliográficos
Autores principales: Su, Wilson Yeung-Sy, Lu, Victor Chien-Pin, Wu, Chii-Bin, Wang, Jyh-Shyang, Shen, Ji-Lin, Chiu, Kuan-Cheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7385126/
https://www.ncbi.nlm.nih.gov/pubmed/32719403
http://dx.doi.org/10.1038/s41598-020-69153-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7385126/
https://www.ncbi.nlm.nih.gov/pubmed/32719403
http://dx.doi.org/10.1038/s41598-020-69153-1

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