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Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis
Temperature (T = 40 ~ 300 K) dependence of Hall-effect analysis on the dual Si-δ-doped AlGaAs/InGaAs/AlGaAs quantum-well (QW) structures with various space layer thicknesses (t(S) = 5, 10 and 15 nm) was performed. An interesting hysteresis behavior of electron sheet concentration [n(2D)(T)] was obse...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7385126/ https://www.ncbi.nlm.nih.gov/pubmed/32719403 http://dx.doi.org/10.1038/s41598-020-69153-1 |