Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition

Characteristics of atomic layer deposition (ALD)-grown ZnO thin films on sapphire substrates with and without three-pulsed ozone (O(3)) as oxidant precursor and post-deposition thermal annealing (TA) are investigated. Deposition temperature and thickness of ZnO epilayers are 180 °C and 85 nm, respec...

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Detalles Bibliográficos
Autores principales: Cheng, Yung-Chen, Wang, Hsiang-Chen, Feng, Shih-Wei, Li, Tsai-Pei, Fung, Siu-Keung, Yuan, Kai-Yun, Chen, Miin-Jang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7391459/
https://www.ncbi.nlm.nih.gov/pubmed/32728964
http://dx.doi.org/10.1186/s11671-020-03382-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7391459/
https://www.ncbi.nlm.nih.gov/pubmed/32728964
http://dx.doi.org/10.1186/s11671-020-03382-1

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