Co-dosing Ozone and Deionized Water as Oxidant Precursors of ZnO Thin Film Growth by Atomic Layer Deposition

Characteristics of atomic layer deposition (ALD)-grown ZnO thin films on sapphire substrates with and without three-pulsed ozone (O(3)) as oxidant precursor and post-deposition thermal annealing (TA) are investigated. Deposition temperature and thickness of ZnO epilayers are 180 °C and 85 nm, respectively. Post-deposition thermal annealing is conducted at 300 °C in the ambience of oxygen (O(2)) for 1 h. With strong oxidizing agent O(3) and post-deposition TA in growing ZnO, intrinsic strain and stress are reduced to 0.49% and 2.22 GPa, respectively, with extremely low background electron concentration (9.4 × 10(15) cm(−3)). This is originated from a lower density of thermally activated defects in the analyses of thermal quenching of the integrated intensity of photoluminescence (PL) spectra. TA further facilitates recrystallization forming more defect-free grains and then reduces strain and stress state causing a remarkable decrease of electron concentration and melioration of surface roughness.