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Ga(2)Se(3) Defect Semiconductors: The Study of Direct Band Edge and Optical Properties
[Image: see text] Direct band edge is a crucial factor for a functional chalcogenide to be applied in luminescence devices, photodetectors, and solar-energy devices. In this work, the room-temperature band-edge emission of III–VI Ga(2)Se(3) has been first observed by micro-photoluminescence (μPL) me...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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American Chemical Society
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7392520/ https://www.ncbi.nlm.nih.gov/pubmed/32743231 http://dx.doi.org/10.1021/acsomega.0c02623 |