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Ga(2)Se(3) Defect Semiconductors: The Study of Direct Band Edge and Optical Properties

[Image: see text] Direct band edge is a crucial factor for a functional chalcogenide to be applied in luminescence devices, photodetectors, and solar-energy devices. In this work, the room-temperature band-edge emission of III–VI Ga(2)Se(3) has been first observed by micro-photoluminescence (μPL) me...

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Detalles Bibliográficos
Autor principal:	Ho, Ching-Hwa
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2020
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7392520/ https://www.ncbi.nlm.nih.gov/pubmed/32743231 http://dx.doi.org/10.1021/acsomega.0c02623

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