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Extraction technique of trap states based on transient photo-voltage measurement

This article puts forward a technique for extracting the density of trap states (DOS(T)) distribution based on the transient photo-voltage (TPV) measurement result. We prove that when the TPV result is linear, the DOS(T) distribution is exponential type and vice versa. Compared to the approach based...

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Detalles Bibliográficos
Autor principal: Lin, Zedong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7393153/
https://www.ncbi.nlm.nih.gov/pubmed/32732950
http://dx.doi.org/10.1038/s41598-020-69914-y
Descripción
Sumario:This article puts forward a technique for extracting the density of trap states (DOS(T)) distribution based on the transient photo-voltage (TPV) measurement result. We prove that when the TPV result is linear, the DOS(T) distribution is exponential type and vice versa. Compared to the approach based on the space charge limited current measurement, the method given in this paper has the advantage of requiring less calculation. The results obtained by our method provides a guidance for preparing less trap states solar cells.