Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy

Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of nucleated GaSe layers grown on hexagonal GaN/Sapphire and...

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Detalles Bibliográficos
Autores principales: Liu, Cheng-Wei, Dai, Jin-Ji, Wu, Ssu-Kuan, Diep, Nhu-Quynh, Huynh, Sa-Hoang, Mai, Thi-Thu, Wen, Hua-Chiang, Yuan, Chi-Tsu, Chou, Wu-Ching, Shen, Ji-Lin, Luc, Huy-Hoang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7395717/
https://www.ncbi.nlm.nih.gov/pubmed/32737426
http://dx.doi.org/10.1038/s41598-020-69946-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7395717/
https://www.ncbi.nlm.nih.gov/pubmed/32737426
http://dx.doi.org/10.1038/s41598-020-69946-4

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