Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure

Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here,...

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Detalles Bibliográficos
Autores principales: Zhang, Siqing, Liu, Yan, Zhou, Jiuren, Ma, Meng, Gao, Anyuan, Zheng, Binjie, Li, Lingfei, Su, Xin, Han, Genquan, Zhang, Jincheng, Shi, Yi, Wang, Xiaomu, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7396413/
https://www.ncbi.nlm.nih.gov/pubmed/32743764
http://dx.doi.org/10.1186/s11671-020-03384-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7396413/
https://www.ncbi.nlm.nih.gov/pubmed/32743764
http://dx.doi.org/10.1186/s11671-020-03384-z

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