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AlN formation by an Al/GaN substitution reaction

Aluminium nitride (AlN) is a promising semiconductor material for use as a substrate in high-power, high-frequency electronic and deep-ultraviolet optoelectronic devices. We study the feasibility of a novel AlN fabrication technique by using the Al/GaN substitution reaction method. The substitution...

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Detalles Bibliográficos
Autores principales:	Noorprajuda, Marsetio, Ohtsuka, Makoto, Adachi, Masayoshi, Fukuyama, Hiroyuki
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7400649/ https://www.ncbi.nlm.nih.gov/pubmed/32747690 http://dx.doi.org/10.1038/s41598-020-69992-y

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