AlN formation by an Al/GaN substitution reaction

Aluminium nitride (AlN) is a promising semiconductor material for use as a substrate in high-power, high-frequency electronic and deep-ultraviolet optoelectronic devices. We study the feasibility of a novel AlN fabrication technique by using the Al/GaN substitution reaction method. The substitution...

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Detalles Bibliográficos
Autores principales: Noorprajuda, Marsetio, Ohtsuka, Makoto, Adachi, Masayoshi, Fukuyama, Hiroyuki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7400649/
https://www.ncbi.nlm.nih.gov/pubmed/32747690
http://dx.doi.org/10.1038/s41598-020-69992-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7400649/
https://www.ncbi.nlm.nih.gov/pubmed/32747690
http://dx.doi.org/10.1038/s41598-020-69992-y

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