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High-mobility junction field-effect transistor via graphene/MoS(2) heterointerface
Monolayer molybdenum disulfide (MoS(2)) possesses a desirable direct bandgap with moderate carrier mobility, whereas graphene (Gr) exhibits a zero bandgap and excellent carrier mobility. Numerous approaches have been suggested for concomitantly realizing high on/off current ratio and high carrier mo...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7403303/ https://www.ncbi.nlm.nih.gov/pubmed/32753604 http://dx.doi.org/10.1038/s41598-020-70038-6 |