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High-mobility junction field-effect transistor via graphene/MoS(2) heterointerface

Monolayer molybdenum disulfide (MoS(2)) possesses a desirable direct bandgap with moderate carrier mobility, whereas graphene (Gr) exhibits a zero bandgap and excellent carrier mobility. Numerous approaches have been suggested for concomitantly realizing high on/off current ratio and high carrier mo...

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Detalles Bibliográficos
Autores principales:	Kim, Taesoo, Fan, Sidi, Lee, Sanghyub, Joo, Min-Kyu, Lee, Young Hee
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7403303/ https://www.ncbi.nlm.nih.gov/pubmed/32753604 http://dx.doi.org/10.1038/s41598-020-70038-6

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