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Optical detection of electron spin dynamics driven by fast variations of a magnetic field: a simple method to measure [Formula: see text] , [Formula: see text] , and [Formula: see text] in semiconductors

We develop a simple method for measuring the electron spin relaxation times [Formula: see text] , [Formula: see text] and [Formula: see text] in semiconductors and demonstrate its exemplary application to n-type GaAs. Using an abrupt variation of the magnetic field acting on electron spins, we detec...

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Detalles Bibliográficos
Autores principales: Belykh, V. V., Yakovlev, D. R., Bayer, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7403391/
https://www.ncbi.nlm.nih.gov/pubmed/32753635
http://dx.doi.org/10.1038/s41598-020-70036-8
Descripción
Sumario:We develop a simple method for measuring the electron spin relaxation times [Formula: see text] , [Formula: see text] and [Formula: see text] in semiconductors and demonstrate its exemplary application to n-type GaAs. Using an abrupt variation of the magnetic field acting on electron spins, we detect the spin evolution by measuring the Faraday rotation of a short laser pulse. Depending on the magnetic field orientation, this allows us to measure either the longitudinal spin relaxation time [Formula: see text] or the inhomogeneous transverse spin dephasing time [Formula: see text] . In order to determine the homogeneous spin coherence time [Formula: see text] , we apply a pulse of an oscillating radiofrequency (rf) field resonant with the Larmor frequency and detect the subsequent decay of the spin precession. The amplitude of the rf-driven spin precession is significantly enhanced upon additional optical pumping along the magnetic field.