Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes

Efficient and low‐cost production of high‐quality aluminum nitride (AlN) films during heteroepitaxy is the key for the development of deep ultraviolet light‐emitting diodes (DUV‐LEDs). Here, the quasi‐2D growth of high‐quality AlN film with low strain and low dislocation density on graphene (Gr) is...

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Detalles Bibliográficos
Autores principales: Chang, Hongliang, Chen, Zhaolong, Liu, Bingyao, Yang, Shenyuan, Liang, Dongdong, Dou, Zhipeng, Zhang, Yonghui, Yan, Jianchang, Liu, Zhiqiang, Zhang, Zihui, Wang, Junxi, Li, Jinmin, Liu, Zhongfan, Gao, Peng, Wei, Tongbo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2020
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7404167/
https://www.ncbi.nlm.nih.gov/pubmed/32775172
http://dx.doi.org/10.1002/advs.202001272

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7404167/
https://www.ncbi.nlm.nih.gov/pubmed/32775172
http://dx.doi.org/10.1002/advs.202001272

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