Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View

The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allo...

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Autores principales: Grossi, Davide F., Koelling, Sebastian, Yunin, Pavel A., Koenraad, Paul M., Klimko, Grigory V., Sorokin, Sergey V., Drozdov, Mikhail N., Ivanov, Sergey V., Toropov, Alexey A., Silov, Andrei Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
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Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7407323/
https://www.ncbi.nlm.nih.gov/pubmed/32635471
http://dx.doi.org/10.3390/nano10071315
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author Grossi, Davide F.
Koelling, Sebastian
Yunin, Pavel A.
Koenraad, Paul M.
Klimko, Grigory V.
Sorokin, Sergey V.
Drozdov, Mikhail N.
Ivanov, Sergey V.
Toropov, Alexey A.
Silov, Andrei Y.
author_facet Grossi, Davide F.
Koelling, Sebastian
Yunin, Pavel A.
Koenraad, Paul M.
Klimko, Grigory V.
Sorokin, Sergey V.
Drozdov, Mikhail N.
Ivanov, Sergey V.
Toropov, Alexey A.
Silov, Andrei Y.
author_sort Grossi, Davide F.
collection PubMed
description The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.
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spelling pubmed-74073232020-08-11 Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View Grossi, Davide F. Koelling, Sebastian Yunin, Pavel A. Koenraad, Paul M. Klimko, Grigory V. Sorokin, Sergey V. Drozdov, Mikhail N. Ivanov, Sergey V. Toropov, Alexey A. Silov, Andrei Y. Nanomaterials (Basel) Article The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties. MDPI 2020-07-04 /pmc/articles/PMC7407323/ /pubmed/32635471 http://dx.doi.org/10.3390/nano10071315 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Grossi, Davide F.
Koelling, Sebastian
Yunin, Pavel A.
Koenraad, Paul M.
Klimko, Grigory V.
Sorokin, Sergey V.
Drozdov, Mikhail N.
Ivanov, Sergey V.
Toropov, Alexey A.
Silov, Andrei Y.
Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View
title Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View
title_full Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View
title_fullStr Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View
title_full_unstemmed Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View
title_short Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View
title_sort design and characterization of a sharp gaas/zn(mn)se heterovalent interface: a sub-nanometer scale view
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7407323/
https://www.ncbi.nlm.nih.gov/pubmed/32635471
http://dx.doi.org/10.3390/nano10071315
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