Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

We identify correlation between the drain currents in pristine n-channel FinFET transistors and changes in time-0 currents induced by hot-carrier stress. To achieve this goal, we employ our statistical simulation model for hot-carrier degradation (HCD), which considers the effect of random dopants (...

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Detalles Bibliográficos
Autores principales: Makarov, Alexander, Roussel, Philippe, Bury, Erik, Vandemaele, Michiel, Spessot, Alessio, Linten, Dimitri, Kaczer, Ben, Tyaginov, Stanislav
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7407495/
https://www.ncbi.nlm.nih.gov/pubmed/32630139
http://dx.doi.org/10.3390/mi11070657

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7407495/
https://www.ncbi.nlm.nih.gov/pubmed/32630139
http://dx.doi.org/10.3390/mi11070657

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