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Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

We identify correlation between the drain currents in pristine n-channel FinFET transistors and changes in time-0 currents induced by hot-carrier stress. To achieve this goal, we employ our statistical simulation model for hot-carrier degradation (HCD), which considers the effect of random dopants (...

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Detalles Bibliográficos
Autores principales:	Makarov, Alexander, Roussel, Philippe, Bury, Erik, Vandemaele, Michiel, Spessot, Alessio, Linten, Dimitri, Kaczer, Ben, Tyaginov, Stanislav
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7407495/ https://www.ncbi.nlm.nih.gov/pubmed/32630139 http://dx.doi.org/10.3390/mi11070657

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