Effects of 5 MeV Proton Irradiation on Nitrided SiO(2)/4H-SiC MOS Capacitors and the Related Mechanisms

In this paper the effects of 5 MeV proton irradiation on nitrided SiO(2)/4H-SiC metal–oxide–semiconductor (MOS) capacitors are studied in detail and the related mechanisms are revealed. The density of interface states (Dit) is increased with the irradiation doses, and the annealing response suggests...

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Detalles Bibliográficos
Autores principales: Li, Dongxun, Zhang, Yuming, Tang, Xiaoyan, He, Yanjing, Yuan, Hao, Jia, Yifan, Song, Qingwen, Zhang, Ming, Zhang, Yimen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408167/
https://www.ncbi.nlm.nih.gov/pubmed/32650592
http://dx.doi.org/10.3390/nano10071332

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408167/
https://www.ncbi.nlm.nih.gov/pubmed/32650592
http://dx.doi.org/10.3390/nano10071332

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