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Effects of 5 MeV Proton Irradiation on Nitrided SiO(2)/4H-SiC MOS Capacitors and the Related Mechanisms
In this paper the effects of 5 MeV proton irradiation on nitrided SiO(2)/4H-SiC metal–oxide–semiconductor (MOS) capacitors are studied in detail and the related mechanisms are revealed. The density of interface states (Dit) is increased with the irradiation doses, and the annealing response suggests...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408167/ https://www.ncbi.nlm.nih.gov/pubmed/32650592 http://dx.doi.org/10.3390/nano10071332 |
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author | Li, Dongxun Zhang, Yuming Tang, Xiaoyan He, Yanjing Yuan, Hao Jia, Yifan Song, Qingwen Zhang, Ming Zhang, Yimen |
author_facet | Li, Dongxun Zhang, Yuming Tang, Xiaoyan He, Yanjing Yuan, Hao Jia, Yifan Song, Qingwen Zhang, Ming Zhang, Yimen |
author_sort | Li, Dongxun |
collection | PubMed |
description | In this paper the effects of 5 MeV proton irradiation on nitrided SiO(2)/4H-SiC metal–oxide–semiconductor (MOS) capacitors are studied in detail and the related mechanisms are revealed. The density of interface states (Dit) is increased with the irradiation doses, and the annealing response suggests that the worse of Dit is mainly caused by displacement effect of proton irradiation. However, the X-rays photoelectron spectroscopy (XPS) measurement shows that the quantity proportion of breaking of Si≡N induced by displacement is only 8%, which means that the numbers of near interface electron traps (NIETs) and near interface hole traps (NIHTs) are not significantly changed by the displacement effect. The measurements of bidirectional high frequency (HF) C-V characteristics and positive bias stress stability show that the number of un-trapped NIETs and oxide electron traps decreased with increasing irradiation doses because they are filled by electrons resulted from the ionization effect of proton irradiation, benefiting to the field effective mobility (μ(FE)) and threshold voltage stability of metal–oxide–semiconductor field-effect transistors (MOSFETs). The obviously negative shift of flat-band voltage (V(FB)) resulted from the dominant NIHTs induced by nitrogen passivation capture more holes produced by ionization effect, which has been revealed by the experimental samples with different nitrogen content under same irradiation dose. |
format | Online Article Text |
id | pubmed-7408167 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-74081672020-08-25 Effects of 5 MeV Proton Irradiation on Nitrided SiO(2)/4H-SiC MOS Capacitors and the Related Mechanisms Li, Dongxun Zhang, Yuming Tang, Xiaoyan He, Yanjing Yuan, Hao Jia, Yifan Song, Qingwen Zhang, Ming Zhang, Yimen Nanomaterials (Basel) Article In this paper the effects of 5 MeV proton irradiation on nitrided SiO(2)/4H-SiC metal–oxide–semiconductor (MOS) capacitors are studied in detail and the related mechanisms are revealed. The density of interface states (Dit) is increased with the irradiation doses, and the annealing response suggests that the worse of Dit is mainly caused by displacement effect of proton irradiation. However, the X-rays photoelectron spectroscopy (XPS) measurement shows that the quantity proportion of breaking of Si≡N induced by displacement is only 8%, which means that the numbers of near interface electron traps (NIETs) and near interface hole traps (NIHTs) are not significantly changed by the displacement effect. The measurements of bidirectional high frequency (HF) C-V characteristics and positive bias stress stability show that the number of un-trapped NIETs and oxide electron traps decreased with increasing irradiation doses because they are filled by electrons resulted from the ionization effect of proton irradiation, benefiting to the field effective mobility (μ(FE)) and threshold voltage stability of metal–oxide–semiconductor field-effect transistors (MOSFETs). The obviously negative shift of flat-band voltage (V(FB)) resulted from the dominant NIHTs induced by nitrogen passivation capture more holes produced by ionization effect, which has been revealed by the experimental samples with different nitrogen content under same irradiation dose. MDPI 2020-07-08 /pmc/articles/PMC7408167/ /pubmed/32650592 http://dx.doi.org/10.3390/nano10071332 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Li, Dongxun Zhang, Yuming Tang, Xiaoyan He, Yanjing Yuan, Hao Jia, Yifan Song, Qingwen Zhang, Ming Zhang, Yimen Effects of 5 MeV Proton Irradiation on Nitrided SiO(2)/4H-SiC MOS Capacitors and the Related Mechanisms |
title | Effects of 5 MeV Proton Irradiation on Nitrided SiO(2)/4H-SiC MOS Capacitors and the Related Mechanisms |
title_full | Effects of 5 MeV Proton Irradiation on Nitrided SiO(2)/4H-SiC MOS Capacitors and the Related Mechanisms |
title_fullStr | Effects of 5 MeV Proton Irradiation on Nitrided SiO(2)/4H-SiC MOS Capacitors and the Related Mechanisms |
title_full_unstemmed | Effects of 5 MeV Proton Irradiation on Nitrided SiO(2)/4H-SiC MOS Capacitors and the Related Mechanisms |
title_short | Effects of 5 MeV Proton Irradiation on Nitrided SiO(2)/4H-SiC MOS Capacitors and the Related Mechanisms |
title_sort | effects of 5 mev proton irradiation on nitrided sio(2)/4h-sic mos capacitors and the related mechanisms |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408167/ https://www.ncbi.nlm.nih.gov/pubmed/32650592 http://dx.doi.org/10.3390/nano10071332 |
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