Biomaterial-Induced Stable Resistive Switching Mechanism in TiO(2) Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

[Image: see text] Leakage of current in oxide layers is the main issue for higher speed and denser resistive random-access memory. Defect engineering played a substantial role in meeting this challenge by doping or producing controlled interstitial defects or active sites. These controlled active si...

Descripción completa

Detalles Bibliográficos
Autores principales: Abbasi, Misbah Sehar, Irshad, Muhammad Sultan, Arshad, Naila, Ahmed, Iftikhar, Idrees, Muhammad, Ahmad, Shafiq, Wei, Zhou, Sharaf, Mohamed, Al Firdausi, Muhammad Dzulqarnain
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408193/
https://www.ncbi.nlm.nih.gov/pubmed/32775907
http://dx.doi.org/10.1021/acsomega.0c02410

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408193/
https://www.ncbi.nlm.nih.gov/pubmed/32775907
http://dx.doi.org/10.1021/acsomega.0c02410

Ejemplares similares