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Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector

In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50–100 picoseconds were predicted for electrode spacing of 5–10 μm. Expanding on these previous works, we systematically study the electrical characteristics of the ultra-fast, 3D-trench electrode silicon de...

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Detalles Bibliográficos
Autores principales: Liu, Manwen, Zhou, Tao, Li, Zheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408304/
https://www.ncbi.nlm.nih.gov/pubmed/32664339
http://dx.doi.org/10.3390/mi11070674