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Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector
In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50–100 picoseconds were predicted for electrode spacing of 5–10 μm. Expanding on these previous works, we systematically study the electrical characteristics of the ultra-fast, 3D-trench electrode silicon de...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408304/ https://www.ncbi.nlm.nih.gov/pubmed/32664339 http://dx.doi.org/10.3390/mi11070674 |