Electrical Properties of Ultra-Fast 3D-Trench Electrode Silicon Detector

In our previous work on ultra-fast silicon detectors, extremely small carrier drift times of 50–100 picoseconds were predicted for electrode spacing of 5–10 μm. Expanding on these previous works, we systematically study the electrical characteristics of the ultra-fast, 3D-trench electrode silicon detector cell with p-type bulk silicon, such as electric potential distribution, electric field distribution, hole concentration distribution, and leakage current to analyze the full detector depletion voltage and other detector properties. To verify the prediction of ultra-fast response times, we simulate the instant induced current curves before and after irradiation with different minimum ionizing particle (MIP) hitting positions. High position resolution pixel detectors can be fabricated by constructing an array of these extremely small detector cells.