Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors

The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has...

Descripción completa

Detalles Bibliográficos
Autores principales: Dragoman, Mircea, Dinescu, Adrian, Nastase, Florin, Dragoman, Daniela
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408462/
https://www.ncbi.nlm.nih.gov/pubmed/32707647
http://dx.doi.org/10.3390/nano10071404

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408462/
https://www.ncbi.nlm.nih.gov/pubmed/32707647
http://dx.doi.org/10.3390/nano10071404

Ejemplares similares