Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors

The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has...

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Detalles Bibliográficos
Autores principales: Dragoman, Mircea, Dinescu, Adrian, Nastase, Florin, Dragoman, Daniela
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408462/
https://www.ncbi.nlm.nih.gov/pubmed/32707647
http://dx.doi.org/10.3390/nano10071404
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author Dragoman, Mircea
Dinescu, Adrian
Nastase, Florin
Dragoman, Daniela
author_facet Dragoman, Mircea
Dinescu, Adrian
Nastase, Florin
Dragoman, Daniela
author_sort Dragoman, Mircea
collection PubMed
description The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO(2)-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.
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spelling pubmed-74084622020-08-13 Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors Dragoman, Mircea Dinescu, Adrian Nastase, Florin Dragoman, Daniela Nanomaterials (Basel) Communication The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO(2)-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm. MDPI 2020-07-19 /pmc/articles/PMC7408462/ /pubmed/32707647 http://dx.doi.org/10.3390/nano10071404 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Communication
Dragoman, Mircea
Dinescu, Adrian
Nastase, Florin
Dragoman, Daniela
Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors
title Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors
title_full Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors
title_fullStr Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors
title_full_unstemmed Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors
title_short Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors
title_sort memtransistors based on nanopatterned graphene ferroelectric field-effect transistors
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408462/
https://www.ncbi.nlm.nih.gov/pubmed/32707647
http://dx.doi.org/10.3390/nano10071404
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AT dinescuadrian memtransistorsbasedonnanopatternedgrapheneferroelectricfieldeffecttransistors
AT nastaseflorin memtransistorsbasedonnanopatternedgrapheneferroelectricfieldeffecttransistors
AT dragomandaniela memtransistorsbasedonnanopatternedgrapheneferroelectricfieldeffecttransistors

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