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Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors
The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7408462/ https://www.ncbi.nlm.nih.gov/pubmed/32707647 http://dx.doi.org/10.3390/nano10071404 |