Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current Spreading

Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (μLEDs) strongly suffer from surface recombination that is induced by sidewall defects. Moreover, as the chip size decreases, the current spreading will be correspondingly enhanced, which therefore further limits the carr...

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Detalles Bibliográficos
Autores principales: Chang, Le, Yeh, Yen-Wei, Hang, Sheng, Tian, Kangkai, Kou, Jianquan, Bi, Wengang, Zhang, Yonghui, Zhang, Zi-Hui, Liu, Zhaojun, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7410900/
https://www.ncbi.nlm.nih.gov/pubmed/32761479
http://dx.doi.org/10.1186/s11671-020-03372-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7410900/
https://www.ncbi.nlm.nih.gov/pubmed/32761479
http://dx.doi.org/10.1186/s11671-020-03372-3

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