Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors

We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm(2)·V(−1)·s(−1). The increase in mobility was more sign...

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Detalles Bibliográficos
Autores principales: Shin, Min-Gyu, Bae, Kang-Hwan, Cha, Hyun-Seok, Jeong, Hwan-Seok, Kim, Dae-Hwan, Kwon, Hyuck-In
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7411776/
https://www.ncbi.nlm.nih.gov/pubmed/32650540
http://dx.doi.org/10.3390/ma13143055

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7411776/
https://www.ncbi.nlm.nih.gov/pubmed/32650540
http://dx.doi.org/10.3390/ma13143055

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