Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy

The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the...

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Detalles Bibliográficos
Autores principales: Kurka, Marcin, Rygała, Michał, Sęk, Grzegorz, Gutowski, Piotr, Pierściński, Kamil, Motyka, Marcin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7412041/
https://www.ncbi.nlm.nih.gov/pubmed/32664660
http://dx.doi.org/10.3390/ma13143109

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7412041/
https://www.ncbi.nlm.nih.gov/pubmed/32664660
http://dx.doi.org/10.3390/ma13143109

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