Cargando…

Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy

The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the...

Descripción completa

Detalles Bibliográficos
Autores principales:	Kurka, Marcin, Rygała, Michał, Sęk, Grzegorz, Gutowski, Piotr, Pierściński, Kamil, Motyka, Marcin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7412041/ https://www.ncbi.nlm.nih.gov/pubmed/32664660 http://dx.doi.org/10.3390/ma13143109

Ejemplares similares

In-Depth Experimental Analysis of Influence of Electroplated Gold Thickness on Thermal and Electro-Optical Properties of mid-IR AlInAs/InGaAs/InP Quantum Cascade Lasers
por: Pierścińska, Dorota, et al.
Publicado: (2021)

Optimization of MBE Growth Conditions of In(0.52)Al(0.48)As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers
por: Gutowski, Piotr, et al.
Publicado: (2019)

Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars
por: Higuera-Rodriguez, A., et al.
Publicado: (2017)

Towards Interband Cascade lasers on InP Substrate
por: Ryczko, Krzysztof, et al.
Publicado: (2021)

The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures
por: Zhao, Xiaohong, et al.
Publicado: (2019)

The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate
por: Shuhui, Zhang, et al.
Publicado: (2012)

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires
por: Ji, Xianghai, et al.
Publicado: (2018)

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer
por: Wyborski, Paweł, et al.
Publicado: (2022)

Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band
por: Holewa, Paweł, et al.
Publicado: (2020)

High performance visible-SWIR flexible photodetector based on large-area InGaAs/InP PIN structure
por: Li, Xuanzhang, et al.
Publicado: (2022)

Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche Photodiodes
por: Chen, Yu-Chun, et al.
Publicado: (2023)

Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
por: Wang, Ying, et al.
Publicado: (2017)

Characteristics and Degradation Mechanisms under High Reverse Base–Collector Bias Stress in InGaAs/InP Double HBTs
por: Yan, Silu, et al.
Publicado: (2023)

Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers
por: Motyka, Marcin, et al.
Publicado: (2015)

Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films
por: Smołka, Tristan, et al.
Publicado: (2023)

The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot
por: Rainò, Gabriele, et al.
Publicado: (2007)

High-Power Growth-Robust InGaAs/InAlAs Terahertz Quantum Cascade Lasers
por: Deutsch, Christoph, et al.
Publicado: (2017)

Dynamics of Broadband Lasing Cascade from a Single Dot-in-well InGaAs Microdisk
por: Talalaev, Vadim, et al.
Publicado: (2019)

Polarized photoreflectance and photoluminescence spectroscopy of InGaAs/GaAs quantum rods grown with As(2) and As(4) sources
por: Nedzinskas, Ramūnas, et al.
Publicado: (2012)

Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures
por: Rudno-Rudziński, Wojciech, et al.
Publicado: (2018)

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
por: Wang, Zhiming M, et al.
Publicado: (2010)

Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications
por: Moratis, K., et al.
Publicado: (2016)

Contactless transient carrier spectroscopy and imaging technique using lock-in free carrier emission and absorption
por: Rougieux, Fiacre E., et al.
Publicado: (2019)

Radiation Effects on High-Speed InGaAs Photodiodes
por: Olantera, Lauri, et al.
Publicado: (2019)

Optimization of InGaAs/InAlAs Avalanche Photodiodes
por: Chen, Jun, et al.
Publicado: (2017)

Experimentally-Verified Modeling of InGaAs Quantum Dots
por: Kosarev, Alexander N., et al.
Publicado: (2022)

Free-Running Single-Photon Detection via GHz Gated InGaAs/InP APD for High Time Resolution and Count Rate up to 500 Mcount/s
por: Wu, Wen, et al.
Publicado: (2023)

Correlation of Superlattice Cross-Plane Thermal Conductivity with Emission Wavelength in InAlAs/InGaAs Quantum Cascade Lasers
por: Villalobos Meza, Alejandro M., et al.
Publicado: (2022)

Temperature-dependent Raman investigation of rolled up InGaAs/GaAs microtubes
por: Rodriguez, Raul D, et al.
Publicado: (2012)

Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
por: Kondratenko, Serhiy V., et al.
Publicado: (2017)

Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs
por: Stephen, Nicholas, et al.
Publicado: (2023)

Chirped InGaAs quantum dot molecules for broadband applications
por: Patanasemakul, Nirat, et al.
Publicado: (2012)

Observation of the Multilayer Growth Mode in Ternary InGaAs Nanowires
por: Sjökvist, Robin, et al.
Publicado: (2022)

Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures
por: Yang, Bo, et al.
Publicado: (2023)

Highly polarized electron source by using InGaAs-GaAs strained-layer superlattice
por: Omori, T, et al.
Publicado: (1994)

Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
por: Maximov, Mikhail V, et al.
Publicado: (2014)

Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range
por: Dyksik, Mateusz, et al.
Publicado: (2015)

Characterization of Cd implanted and annealed GaAs and InP by perturbed angular correlation (PAC) spectroscopy
por: Pfeiffer, Wolfgang, et al.
Publicado: (1991)

The role of nonequilibrium LO phonons, Pauli exclusion, and intervalley pathways on the relaxation of hot carriers in InGaAs/InGaAsP multi-quantum-wells
por: Zou, Yongjie, et al.
Publicado: (2023)

Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
por: Dey, Arka B., et al.
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_vmstk3kcgfnal0336r8eq5uuu4