Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer ai...

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Detalles Bibliográficos
Autores principales: Fan, Linjie, Bi, Jinshun, Xi, Kai, Yan, Gangping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7412317/
https://www.ncbi.nlm.nih.gov/pubmed/32708539
http://dx.doi.org/10.3390/s20143946

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7412317/
https://www.ncbi.nlm.nih.gov/pubmed/32708539
http://dx.doi.org/10.3390/s20143946

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