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Dewetting behavior of Ge layers on SiO(2) under annealing
The solid-state dewetting phenomenon in Ge layers on SiO(2) is investigated as a function of layer thickness d(Ge) (from 10 to 86 nm) and annealing temperature. The dewetting is initiated at about 580–700 °C, depending on d(Ge), through the appearance of surface undulation leading to the particle fo...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7426840/ https://www.ncbi.nlm.nih.gov/pubmed/32792554 http://dx.doi.org/10.1038/s41598-020-70723-6 |