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Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation
A review and perspective is presented of the classical, semi-classical and fully quantum routes to the simulation of electro-thermal phenomena in ultra-scaled silicon nanowire field-effect transistors. It is shown that the physics of ultra-scaled devices requires at least a coupled electron quantum...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7435733/ https://www.ncbi.nlm.nih.gov/pubmed/32722649 http://dx.doi.org/10.3390/ma13153326 |