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Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation

A review and perspective is presented of the classical, semi-classical and fully quantum routes to the simulation of electro-thermal phenomena in ultra-scaled silicon nanowire field-effect transistors. It is shown that the physics of ultra-scaled devices requires at least a coupled electron quantum...

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Detalles Bibliográficos
Autores principales: Martinez, Antonio, Barker, John R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7435733/
https://www.ncbi.nlm.nih.gov/pubmed/32722649
http://dx.doi.org/10.3390/ma13153326

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