Cargando…
Influence of Surface and Bulk Defects on Contactless Resistivity Measurements of CdTe and Related Compounds
We analyzed the influence of parameters of deep levels in the bulk and conditions on the surface on transient charge responses of semi-insulating samples (CdTe and GaAs). We studied the dependence on the applied bias step used for the experimental evaluation of resistivity in contactless measurement...
Autores principales: | Franc, Jan, Grill, Roman, Zázvorka, Jakub |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7435808/ https://www.ncbi.nlm.nih.gov/pubmed/32759802 http://dx.doi.org/10.3390/s20154347 |
Ejemplares similares
-
Dynamics of native oxide growth on CdTe and CdZnTe X-ray and gamma-ray detectors
por: Zázvorka, Jakub, et al.
Publicado: (2016) -
Thermodynamic properties of defects in CdTe as derived by diffusion experiments
por: Wagner, F, et al.
Publicado: (2007) -
Defect recovery of ion-implantd CdTe
por: Burchard, A, et al.
Publicado: (1996) -
CdTe and related compounds: physics, defects, hetero- and nano-structures, crystal growth, surfaces and applications
por: Siffert, Paul, et al.
Publicado: (2009) -
Radiogenic Sn defects in ion-implanted CdTe
por: Grann, H, et al.
Publicado: (1986)