Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The thin films were deposited using trimethyl aluminum (TMA) and hydrazine (N(2)H(4)) as a metal precursor and nitrogen source, respectively. Highly reactive N(2)H(4), compared...

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Detalles Bibliográficos
Autores principales: Jung, Yong Chan, Hwang, Su Min, Le, Dan N., Kondusamy, Aswin L. N., Mohan, Jaidah, Kim, Sang Woo, Kim, Jin Hyun, Lucero, Antonio T., Ravichandran, Arul, Kim, Harrison Sejoon, Kim, Si Joon, Choi, Rino, Ahn, Jinho, Alvarez, Daniel, Spiegelman, Jeff, Kim, Jiyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7436040/
https://www.ncbi.nlm.nih.gov/pubmed/32751836
http://dx.doi.org/10.3390/ma13153387

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7436040/
https://www.ncbi.nlm.nih.gov/pubmed/32751836
http://dx.doi.org/10.3390/ma13153387

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