Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells

An effective-area photovoltaic efficiency of 1.27% in power conversion, excluding the grid metal contact area and under 1 sun, AM 1.5G conditions, has been obtained for the p-GaN/i-InGaN/n-GaN diode arrays epitaxially grown on (111)-Si. The short-circuit current density is 14.96 mA/cm(2) and the ope...

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Detalles Bibliográficos
Autores principales: Chang, Ching-Wen, Wadekar, Paritosh V., Huang, Hui-Chun, Chen, Quark Yung-Sung, Wu, Yuh-Renn, Chen, Ray T., Tu, Li-Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7441121/
https://www.ncbi.nlm.nih.gov/pubmed/32816117
http://dx.doi.org/10.1186/s11671-020-03392-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7441121/
https://www.ncbi.nlm.nih.gov/pubmed/32816117
http://dx.doi.org/10.1186/s11671-020-03392-z

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