Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells

An effective-area photovoltaic efficiency of 1.27% in power conversion, excluding the grid metal contact area and under 1 sun, AM 1.5G conditions, has been obtained for the p-GaN/i-InGaN/n-GaN diode arrays epitaxially grown on (111)-Si. The short-circuit current density is 14.96 mA/cm(2) and the ope...

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Autores principales: Chang, Ching-Wen, Wadekar, Paritosh V., Huang, Hui-Chun, Chen, Quark Yung-Sung, Wu, Yuh-Renn, Chen, Ray T., Tu, Li-Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7441121/
https://www.ncbi.nlm.nih.gov/pubmed/32816117
http://dx.doi.org/10.1186/s11671-020-03392-z
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author Chang, Ching-Wen
Wadekar, Paritosh V.
Huang, Hui-Chun
Chen, Quark Yung-Sung
Wu, Yuh-Renn
Chen, Ray T.
Tu, Li-Wei
author_facet Chang, Ching-Wen
Wadekar, Paritosh V.
Huang, Hui-Chun
Chen, Quark Yung-Sung
Wu, Yuh-Renn
Chen, Ray T.
Tu, Li-Wei
author_sort Chang, Ching-Wen
collection PubMed
description An effective-area photovoltaic efficiency of 1.27% in power conversion, excluding the grid metal contact area and under 1 sun, AM 1.5G conditions, has been obtained for the p-GaN/i-InGaN/n-GaN diode arrays epitaxially grown on (111)-Si. The short-circuit current density is 14.96 mA/cm(2) and the open-circuit voltage is 0.28 V. Enhanced light trapping acquired via multiple reflections within the strain and defect free III-nitride nanorod array structures and the short-wavelength responses boosted by the wide bandgap III-nitride constituents are believed to contribute to the observed enhancements in device performance.
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spelling pubmed-74411212020-08-28 Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells Chang, Ching-Wen Wadekar, Paritosh V. Huang, Hui-Chun Chen, Quark Yung-Sung Wu, Yuh-Renn Chen, Ray T. Tu, Li-Wei Nanoscale Res Lett Nano Express An effective-area photovoltaic efficiency of 1.27% in power conversion, excluding the grid metal contact area and under 1 sun, AM 1.5G conditions, has been obtained for the p-GaN/i-InGaN/n-GaN diode arrays epitaxially grown on (111)-Si. The short-circuit current density is 14.96 mA/cm(2) and the open-circuit voltage is 0.28 V. Enhanced light trapping acquired via multiple reflections within the strain and defect free III-nitride nanorod array structures and the short-wavelength responses boosted by the wide bandgap III-nitride constituents are believed to contribute to the observed enhancements in device performance. Springer US 2020-08-20 /pmc/articles/PMC7441121/ /pubmed/32816117 http://dx.doi.org/10.1186/s11671-020-03392-z Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Nano Express
Chang, Ching-Wen
Wadekar, Paritosh V.
Huang, Hui-Chun
Chen, Quark Yung-Sung
Wu, Yuh-Renn
Chen, Ray T.
Tu, Li-Wei
Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells
title Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells
title_full Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells
title_fullStr Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells
title_full_unstemmed Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells
title_short Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells
title_sort light trapping induced high short-circuit current density in iii-nitride nanorods/si (111) heterojunction solar cells
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7441121/
https://www.ncbi.nlm.nih.gov/pubmed/32816117
http://dx.doi.org/10.1186/s11671-020-03392-z
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