Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

AlN nucleation layers are the basement of GaN-on-Si structures grown for light-emitting diodes, high frequency telecommunication and power switching systems. In this context, our work aims to understand the origin of propagation losses in GaN-on-Si High Electron Mobility Transistors at microwaves fr...

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Detalles Bibliográficos
Autores principales: Bah, Micka, Valente, Damien, Lesecq, Marie, Defrance, Nicolas, Garcia Barros, Maxime, De Jaeger, Jean-Claude, Frayssinet, Eric, Comyn, Rémi, Ngo, Thi Huong, Alquier, Daniel, Cordier, Yvon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7447785/
https://www.ncbi.nlm.nih.gov/pubmed/32843709
http://dx.doi.org/10.1038/s41598-020-71064-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7447785/
https://www.ncbi.nlm.nih.gov/pubmed/32843709
http://dx.doi.org/10.1038/s41598-020-71064-0

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